SA111 - SiC High Power Half-Bridge Module - Apex Microtechnology

High Power Half-Bridge Module Delivers New Levels of Power Density in Compact Surface-Mount Package

650 V, 32 A Silicon Carbide Half-Bridge Power IC - SA111PQ - Apex

Created with Silicon Carbide (SiC) technology and leading-edge package design, the SA111 is expanding the boundaries of thermal efficiency and power density in integrated power modules. In a surface mount package and with a body of just 20mm x 20mm, the SA111 can provide continuous output currents of up to 32 A, manage supply voltages of up to 650 V, and achieve switching frequencies of up to 1MHz. 

This integrated power module’s thermally efficient, surface-mount package utilizes top-side heat sinking, allowing the user to maximize board layout. 

The SA111's Silicon Carbide MOSFETs enable the device to withstand higher thermal stress, managing junction temperatures of up to 175°C. The SA111 SiC power IC offers a fully integrated solution allowing for increased device control and protection, featuring an integrated gate driver, under-voltage lockout, and active miller clamping. 

A wide range of target applications include magnetic bearings, motor drive, sonar, test equipment, server-fans, Power Factor Correction (PFC), and AC/DC and DC/DC converters.
This product is now formally released and available for sale with a short lead time. 

SA111 - 650V, 32 A SiC Half-Bridge Power IC