SA111 - SiC High Power Half-Bridge Module - Apex Microtechnology
High Power Half-Bridge Module Delivers New Levels of Power Density in Compact Surface-Mount Package
Created with Silicon Carbide (SiC) technology and leading-edge package design, the SA111 is expanding the boundaries of thermal efficiency and power density in analog modules. In a surface mount package and with a body of just 20mm x 20mm, the SA111 can provide continuous output currents of 32A, manage supply voltages of up to 650V, and achieve switching frequencies of up to 1MHz*. This thermally efficient package utilizes top-side heat sinking, allowing the user to maximize board layout. The SA111’s Silicon Carbide MOSFETs enable the device to withstand higher thermal stress, managing junction temperatures of up to 175°C. The SA111 SiC power module offers a fully integrated solution allowing for increased device control and protection, featuring an integrated gate driver, under-voltage lockout, and active Miller clamping.
“The SA111 underlines again Apex Microtechnology’s ability to provide leading-edge high power solutions in a very compact footprint.”, says Director of Business Development, Jens Eltze. “Apex’s patented PQ package addresses the demand from the market for surface mountable devices with top-side cooling.”
With the surface mount package style and exceptionally compact size, designers are afforded the ability to maximize board real estate, allowing for the use of multiple devices in circuit designs with high power requirements. A wide range of target applications include MRI gradient coil-drive, magnetic bearings, motor drive, test equipment, server-fans, Power Factor Correction (PFC), and AC/DC and DC/DC converters.
SA111 - 650V, 32 A SiC Half-Bridge Power IC